All MOSFET. CMP100N04 Datasheet

 

CMP100N04 Datasheet and Replacement


   Type Designator: CMP100N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 112 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO220
 

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CMP100N04 Datasheet (PDF)

 ..1. Size:1019K  1
 cmp100n04 cmb100n04 cmi100n04.pdf pdf_icon

CMP100N04

CMP100N04/CMB100N04/CMI100N04N-Ch 40V Fast Switching MOSFETsGeneral Description Product SummeryThe100N04 is N-ch MOSFETs BVDSS RDSON ID with extreme high cell density ,40V

 ..2. Size:823K  cn vbsemi
 cmp100n04.pdf pdf_icon

CMP100N04

CMP100N04www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0055 at VGS = 10 V 100COMPLIANT 40 130 nC0.0070 at VGS = 4.5 V 90APPLICATIONS Synchronous RectificationTO-220AB Power SuppliesDGSG D STop ViewN-Channel MOSFETABSOLUT

Datasheet: 7N80L-TQ2-R , 7N80L-TQ2-T , 7N80G-TA3-T , 7N80G-TF3-T , 7N80G-TF1-T , 7N80G-TQ2-R , 7N80G-TQ2-T , AO3419L , IRF530 , CMB100N04 , CMI100N04 , HY4306W , HY4306A , MDF1723 , ME4410AD , ME4970 , ME4970G .

History: ME15N25F | IRF6708S2

Keywords - CMP100N04 MOSFET datasheet

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