CMB100N04 MOSFET. Datasheet pdf. Equivalent
Type Designator: CMB100N04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 84 nC
trⓘ - Rise Time: 112 nS
Cossⓘ - Output Capacitance: 1300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: TO263
CMB100N04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CMB100N04 Datasheet (PDF)
cmp100n04 cmb100n04 cmi100n04.pdf
CMP100N04/CMB100N04/CMI100N04N-Ch 40V Fast Switching MOSFETsGeneral Description Product SummeryThe100N04 is N-ch MOSFETs BVDSS RDSON ID with extreme high cell density ,40V
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