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PDEC3907Z Specs and Replacement

Type Designator: PDEC3907Z

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.8 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: PPAK3X3

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PDEC3907Z datasheet

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PDEC3907Z

30V P-Channel MOSFETs PDEC3907Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 20m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =20m @VGS = -10V performance, and withstand high... See More ⇒

Detailed specifications: CMI100N04, HY4306W, HY4306A, MDF1723, ME4410AD, ME4970, ME4970G, NDP04N60Z, AO4407, PFB2N60, PFF2N60, SI4947ADY, STD180N4F6, SUP65P06-20, SUB65P06-20, SVD3205T, SVF12N65F

Keywords - PDEC3907Z MOSFET specs

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