PDEC3907Z Datasheet and Replacement
Type Designator: PDEC3907Z
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18.8 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: PPAK3X3
PDEC3907Z substitution
PDEC3907Z Datasheet (PDF)
pdec3907z.pdf

30V P-Channel MOSFETs PDEC3907Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 20m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =20m@VGS = -10V performance, and withstand high
Datasheet: CMI100N04 , HY4306W , HY4306A , MDF1723 , ME4410AD , ME4970 , ME4970G , NDP04N60Z , P60NF06 , PFB2N60 , PFF2N60 , SI4947ADY , STD180N4F6 , SUP65P06-20 , SUB65P06-20 , SVD3205T , SVF12N65F .
History: WMO07N70C4
Keywords - PDEC3907Z MOSFET datasheet
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PDEC3907Z equivalent finder
PDEC3907Z lookup
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PDEC3907Z replacement
History: WMO07N70C4



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