All MOSFET. PDEC3907Z Datasheet

 

PDEC3907Z Datasheet and Replacement


   Type Designator: PDEC3907Z
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.8 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: PPAK3X3
 

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PDEC3907Z Datasheet (PDF)

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PDEC3907Z

30V P-Channel MOSFETs PDEC3907Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 20m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =20m@VGS = -10V performance, and withstand high

Datasheet: CMI100N04 , HY4306W , HY4306A , MDF1723 , ME4410AD , ME4970 , ME4970G , NDP04N60Z , P60NF06 , PFB2N60 , PFF2N60 , SI4947ADY , STD180N4F6 , SUP65P06-20 , SUB65P06-20 , SVD3205T , SVF12N65F .

History: APT3580BN | RSR030N06

Keywords - PDEC3907Z MOSFET datasheet

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