All MOSFET. PFB2N60 Datasheet

 

PFB2N60 Datasheet and Replacement


   Type Designator: PFB2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
   Package: TO-220
 

 PFB2N60 substitution

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PFB2N60 Datasheet (PDF)

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PFB2N60

Pyramis Corporation PFB2N60/PFF2N60The Silicon System Solutions Companywww.DataSheet4U.comPRELIMINARYN-Channel MOSFETApplications:Adaptor ChargerSMPS Standby PowerLCD Panel PowerVDSS RDS(ON) typical IDFeatures:600V 3.7 2.1A Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching CurvesOrdering In

Datasheet: HY4306W , HY4306A , MDF1723 , ME4410AD , ME4970 , ME4970G , NDP04N60Z , PDEC3907Z , 18N50 , PFF2N60 , SI4947ADY , STD180N4F6 , SUP65P06-20 , SUB65P06-20 , SVD3205T , SVF12N65F , SVF12N65T .

History: CSD19538Q3A | IRFS7434 | CJBD3020 | LNG4N80 | IRF7910PBF-1 | TTB105N06A | LNG4N65

Keywords - PFB2N60 MOSFET datasheet

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