PFB2N60 PDF and Equivalents Search

 

PFB2N60 Specs and Replacement

Type Designator: PFB2N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 46 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm

Package: TO-220

PFB2N60 substitution

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PFB2N60 datasheet

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 pfb2n60 pff2n60.pdf pdf_icon

PFB2N60

Pyramis Corporation PFB2N60/PFF2N60 The Silicon System Solutions Company www.DataSheet4U.com PRELIMINARY N-Channel MOSFET Applications Adaptor Charger SMPS Standby Power LCD Panel Power VDSS RDS(ON) typical ID Features 600V 3.7 2.1A Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering In... See More ⇒

Detailed specifications: HY4306W, HY4306A, MDF1723, ME4410AD, ME4970, ME4970G, NDP04N60Z, PDEC3907Z, BS170, PFF2N60, SI4947ADY, STD180N4F6, SUP65P06-20, SUB65P06-20, SVD3205T, SVF12N65F, SVF12N65T

Keywords - PFB2N60 MOSFET specs

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