All MOSFET. PFF2N60 Datasheet

 

PFF2N60 Datasheet and Replacement


   Type Designator: PFF2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
   Package: TO-220F
 

 PFF2N60 substitution

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PFF2N60 Datasheet (PDF)

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PFF2N60

Pyramis Corporation PFB2N60/PFF2N60The Silicon System Solutions Companywww.DataSheet4U.comPRELIMINARYN-Channel MOSFETApplications:Adaptor ChargerSMPS Standby PowerLCD Panel PowerVDSS RDS(ON) typical IDFeatures:600V 3.7 2.1A Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching CurvesOrdering In

Datasheet: HY4306A , MDF1723 , ME4410AD , ME4970 , ME4970G , NDP04N60Z , PDEC3907Z , PFB2N60 , 2SK3568 , SI4947ADY , STD180N4F6 , SUP65P06-20 , SUB65P06-20 , SVD3205T , SVF12N65F , SVF12N65T , TSP50N06M .

History: S10H06R | 2SK3985-01 | AOB11S65L | SDF200NA10HE | STD4LN80K5 | RU40S4H | TPHR9003NL

Keywords - PFF2N60 MOSFET datasheet

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