PFF2N60 Specs and Replacement
Type Designator: PFF2N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 46 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
Package: TO-220F
PFF2N60 substitution
- MOSFET ⓘ Cross-Reference Search
PFF2N60 datasheet
pfb2n60 pff2n60.pdf
Pyramis Corporation PFB2N60/PFF2N60 The Silicon System Solutions Company www.DataSheet4U.com PRELIMINARY N-Channel MOSFET Applications Adaptor Charger SMPS Standby Power LCD Panel Power VDSS RDS(ON) typical ID Features 600V 3.7 2.1A Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering In... See More ⇒
Detailed specifications: HY4306A, MDF1723, ME4410AD, ME4970, ME4970G, NDP04N60Z, PDEC3907Z, PFB2N60, 4N60, SI4947ADY, STD180N4F6, SUP65P06-20, SUB65P06-20, SVD3205T, SVF12N65F, SVF12N65T, TSP50N06M
Keywords - PFF2N60 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: PFB2N60 | SMP40N10 | 2SK388 | BR40P03 | 60NM60L-T47 | PHB32N06 | 3N75
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