All MOSFET. FDA44N50 Datasheet

 

FDA44N50 Datasheet and Replacement


   Type Designator: FDA44N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 750 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO-3PN
 

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FDA44N50 Datasheet (PDF)

 ..1. Size:215K  inchange semiconductor
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FDA44N50

isc N-Channel MOSFET Transistor FDA44N50FEATURESWith TO-3PN packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate

Datasheet: FCP125N60E , FCP165N60E , FCP260N65S3 , FCP850N80Z , FCPF067N65S3 , FCPF150N65F , FCPF165N65S3L1 , FCPF250N65S3L1 , EMB04N03H , FDI036N10A , FDP8D5N10C , FDPF8D5N10C , FMW60N190S2HF , FQD50N06 , FQD50P06 , IPA030N10N3 , IPA037N08N3 .

History: RJK6022DJE

Keywords - FDA44N50 MOSFET datasheet

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