FDA44N50 Specs and Replacement
Type Designator: FDA44N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 750 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO-3PN
FDA44N50 substitution
- MOSFET ⓘ Cross-Reference Search
FDA44N50 datasheet
fda44n50.pdf
isc N-Channel MOSFET Transistor FDA44N50 FEATURES With TO-3PN packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate... See More ⇒
Detailed specifications: FCP125N60E, FCP165N60E, FCP260N65S3, FCP850N80Z, FCPF067N65S3, FCPF150N65F, FCPF165N65S3L1, FCPF250N65S3L1, AON7403, FDI036N10A, FDP8D5N10C, FDPF8D5N10C, FMW60N190S2HF, FQD50N06, FQD50P06, IPA030N10N3, IPA037N08N3
Keywords - FDA44N50 MOSFET specs
FDA44N50 cross reference
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FDA44N50 substitution
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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