FDP8D5N10C PDF and Equivalents Search

 

FDP8D5N10C Specs and Replacement

Type Designator: FDP8D5N10C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 76 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 1010 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-220

FDP8D5N10C substitution

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FDP8D5N10C datasheet

 ..1. Size:969K  1
 fdp8d5n10c fdpf8d5n10c.pdf pdf_icon

FDP8D5N10C

www.onsemi.com FDP8D5N10C / FDPF8D5N10C N-Channel Shielded Gate PowerTrench MOSFET 100 V, 76 A, 8.5 m Features General Description This N-Channel MV MOSFET is produced using ON Max rDS(on) = 8.5 m at VGS = 10 V, ID = 76 A Semiconductor s advanced PowerTrench process that Extremely Low Reverse Recovery Charge, Qrr incorporates Shielded Gate technology. This process has been... See More ⇒

 ..2. Size:969K  onsemi
 fdp8d5n10c fdpf8d5n10c.pdf pdf_icon

FDP8D5N10C

www.onsemi.com FDP8D5N10C / FDPF8D5N10C N-Channel Shielded Gate PowerTrench MOSFET 100 V, 76 A, 8.5 m Features General Description This N-Channel MV MOSFET is produced using ON Max rDS(on) = 8.5 m at VGS = 10 V, ID = 76 A Semiconductor s advanced PowerTrench process that Extremely Low Reverse Recovery Charge, Qrr incorporates Shielded Gate technology. This process has been... See More ⇒

 ..3. Size:257K  inchange semiconductor
 fdp8d5n10c.pdf pdf_icon

FDP8D5N10C

isc N-Channel MOSFET Transistor FDP8D5N10C FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

Detailed specifications: FCP260N65S3, FCP850N80Z, FCPF067N65S3, FCPF150N65F, FCPF165N65S3L1, FCPF250N65S3L1, FDA44N50, FDI036N10A, EMB04N03H, FDPF8D5N10C, FMW60N190S2HF, FQD50N06, FQD50P06, IPA030N10N3, IPA037N08N3, IPA045N10N3, IPA057N08N3

Keywords - FDP8D5N10C MOSFET specs

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