All MOSFET. FDP8D5N10C Datasheet

 

FDP8D5N10C Datasheet and Replacement


   Type Designator: FDP8D5N10C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 76 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1010 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-220
 

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FDP8D5N10C Datasheet (PDF)

 ..1. Size:969K  1
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FDP8D5N10C

www.onsemi.comFDP8D5N10C / FDPF8D5N10CN-Channel Shielded Gate PowerTrench MOSFET 100 V, 76 A, 8.5 mFeatures General DescriptionThis N-Channel MV MOSFET is produced using ON Max rDS(on) = 8.5 m at VGS = 10 V, ID = 76 ASemiconductors advanced PowerTrench process that Extremely Low Reverse Recovery Charge, Qrrincorporates Shielded Gate technology. This process has been

 ..2. Size:969K  onsemi
 fdp8d5n10c fdpf8d5n10c.pdf pdf_icon

FDP8D5N10C

www.onsemi.comFDP8D5N10C / FDPF8D5N10CN-Channel Shielded Gate PowerTrench MOSFET 100 V, 76 A, 8.5 mFeatures General DescriptionThis N-Channel MV MOSFET is produced using ON Max rDS(on) = 8.5 m at VGS = 10 V, ID = 76 ASemiconductors advanced PowerTrench process that Extremely Low Reverse Recovery Charge, Qrrincorporates Shielded Gate technology. This process has been

 ..3. Size:257K  inchange semiconductor
 fdp8d5n10c.pdf pdf_icon

FDP8D5N10C

isc N-Channel MOSFET Transistor FDP8D5N10CFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Datasheet: FCP260N65S3 , FCP850N80Z , FCPF067N65S3 , FCPF150N65F , FCPF165N65S3L1 , FCPF250N65S3L1 , FDA44N50 , FDI036N10A , 2SK3918 , FDPF8D5N10C , FMW60N190S2HF , FQD50N06 , FQD50P06 , IPA030N10N3 , IPA037N08N3 , IPA045N10N3 , IPA057N08N3 .

History: L2SK801LT1G | IPP039N04LG

Keywords - FDP8D5N10C MOSFET datasheet

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