FMW60N190S2HF MOSFET. Datasheet pdf. Equivalent
Type Designator: FMW60N190S2HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 15.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO-247
FMW60N190S2HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FMW60N190S2HF Datasheet (PDF)
fmw60n190s2hf.pdf
isc N-Channel MOSFET Transistor FMW60N190S2HFFEATURESWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour
fmw60n070s2hf.pdf
isc N-Channel MOSFET Transistor FMW60N070S2HFFEATURESDrain Current : I = 53.2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri
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