All MOSFET. FMW60N190S2HF Datasheet

 

FMW60N190S2HF Datasheet and Replacement


   Type Designator: FMW60N190S2HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-247
 

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FMW60N190S2HF Datasheet (PDF)

 ..1. Size:231K  inchange semiconductor
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FMW60N190S2HF

isc N-Channel MOSFET Transistor FMW60N190S2HFFEATURESWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour

 8.1. Size:331K  inchange semiconductor
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FMW60N190S2HF

isc N-Channel MOSFET Transistor FMW60N070S2HFFEATURESDrain Current : I = 53.2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri

Datasheet: FCPF067N65S3 , FCPF150N65F , FCPF165N65S3L1 , FCPF250N65S3L1 , FDA44N50 , FDI036N10A , FDP8D5N10C , FDPF8D5N10C , 2N7002 , FQD50N06 , FQD50P06 , IPA030N10N3 , IPA037N08N3 , IPA045N10N3 , IPA057N08N3 , IPA086N10N3 , IPA60R180C7 .

History: IRF620SPBF | SEF401002 | IRFH8330

Keywords - FMW60N190S2HF MOSFET datasheet

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