FMW60N190S2HF MOSFET Datasheet: N-Ch, 600V, 15.5A. Full specification with pinout and replacement list

FMW60N190S2HF Specs and Replacement

Type Designator: FMW60N190S2HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO-247

FMW60N190S2HF substitution

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FMW60N190S2HF datasheet

..1. Size:231K inchange semiconductor
fmw60n190s2hf.pdf pdf_icon

isc N-Channel MOSFET Transistor FMW60N190S2HF FEATURES With low gate drive requirements Low switching loss Low on-state resistance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour... See More ⇒

8.1. Size:331K inchange semiconductor
fmw60n070s2hf.pdf pdf_icon

isc N-Channel MOSFET Transistor FMW60N070S2HF FEATURES Drain Current I = 53.2A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dri... See More ⇒

Detailed specifications: FCPF067N65S3, FCPF150N65F, FCPF165N65S3L1, FCPF250N65S3L1, FDA44N50, FDI036N10A, FDP8D5N10C, FDPF8D5N10C, MMIS60R580P, FQD50N06, FQD50P06, IPA030N10N3, IPA037N08N3, IPA045N10N3, IPA057N08N3, IPA086N10N3, IPA60R180C7