IPI147N12N3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI147N12N3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 56 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 304 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0147 Ohm
Package: TO-262
IPI147N12N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI147N12N3 Datasheet (PDF)
ipb144n12n3g ipi147n12n3g ipp147n12n3g ipp147n12n3 ipi147n12n3 ipb144n12n3.pdf
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IPB144N12N3 GIPI147N12N3 G IPP147N12N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D R ( 492??6= ?@C>2= =6G6=R 14 7 m - @? >2I R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n)I DR /6CJ =@H @? C6D:DE2?46 RD n)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH
ipi147n12n3.pdf
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isc N-Channel MOSFET Transistor IPI147N12N3FEATURESStatic drain-source on-resistance:RDS(on) 14.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSY
ipb14n03la ipi14n03la ipp14n03la.pdf
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IPB14N03LAIPI14N03LA, IPP14N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 13.6mDS(on),max N-channelI 30 AD Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Superior thermal resistance
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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