IPI147N12N3 - описание и поиск аналогов

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isc N-Channel MOSFET Transistor IPI147N12N3 FEATURES Static drain-source on-resistance RDS(on) 14.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY