All MOSFET. IPI26CN10N Datasheet

 

IPI26CN10N MOSFET. Datasheet pdf. Equivalent

Type Designator: IPI26CN10N

Marking Code: 26CN10N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 71 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 35 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 23 nC

Rise Time (tr): 4 nS

Drain-Source Capacitance (Cd): 232 pF

Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm

Package: TO-262

IPI26CN10N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI26CN10N Datasheet (PDF)

0.1. ipb26cn10n-g ipd25cn10n-g ipi26cn10n-g ipp26cn10n-g ipu25cn10n-g.pdf Size:707K _infineon

IPI26CN10N
IPI26CN10N

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R 25 mΩ DS(on),max (TO252) • Excellent gate charge x R product (FOM) DS(on) I 35 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified accordi

0.2. ipi26cn10n.pdf Size:256K _inchange_semiconductor

IPI26CN10N
IPI26CN10N

Isc N-Channel MOSFET Transistor IPI26CN10N ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 1

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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