All MOSFET. HY3306P Datasheet

 

HY3306P MOSFET. Datasheet pdf. Equivalent

Type Designator: HY3306P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 230 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 130 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 67 nC

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 621 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0068 Ohm

Package: TO220

HY3306P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY3306P Datasheet (PDF)

0.1. hy3306p hy3306b.pdf Size:4015K _1

HY3306P
HY3306P

HY3306P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/130ARDS(ON)= 5.4 m (typ.) @ VGS=10V100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFET

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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