HY3306P MOSFET. Datasheet pdf. Equivalent
Type Designator: HY3306P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 230 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 130 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 67 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 621 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0068 Ohm
Package: TO220
HY3306P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY3306P Datasheet (PDF)
0.1. hy3306p hy3306b.pdf 
Size:4015K _1
HY3306P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/130ARDS(ON)= 5.4 m (typ.) @ VGS=10V100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFET
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
