All MOSFET. HY3306P Datasheet

 

HY3306P Datasheet and Replacement


   Type Designator: HY3306P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 621 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: TO220
 

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HY3306P Datasheet (PDF)

 ..1. Size:4015K  1
 hy3306p hy3306b.pdf pdf_icon

HY3306P

HY3306P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/130ARDS(ON)= 5.4 m (typ.) @ VGS=10V100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFET

 ..2. Size:948K  hymexa
 hy3306p hy3306b.pdf pdf_icon

HY3306P

HY3306P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 60V/130A RDS(ON)= 5.4m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead- Free Devices Available (RoHS Compliant) Applications Portable equipment and battery powered systems Synchronous rectification N-Channel MOSFET Ordering and Marking Information Package Code

Datasheet: IRFSL7762 , IRFSL7787 , IRFU430A , 12N65KL-TA , 12N65KL-TQ , 12N65KG-TA , 12N65KG-TF , 12N65KG-TQ , 2SK3568 , HY3306B , IRFS630B , MT3203 , SVF5N60T , SVF5N60F , SVF5N60D , SVF5N60MJ , TSP5N60M .

History: G30N20K | IPD70R1K4CE

Keywords - HY3306P MOSFET datasheet

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