MT3203 MOSFET Datasheet: N-Ch, 30V, 100A. Full specification with pinout and replacement list

MT3203 Specs and Replacement

Type Designator: MT3203

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 56 nC

tr ⓘ - Rise Time: 128 nS

Cossⓘ - Output Capacitance: 464 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO220AB

MT3203 substitution

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MT3203 datasheet

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MOS-TECH Semiconductor Co.,LTD N MT3203 N-Channel Low Qg MOSFET 30V, 100A, 3.3m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.3m , VGS = 10V, ID = 40A improve the overall efficiency of DC/ DC converters using rDS(ON) = 4.5m , VGS = 4.5V, ID = 40A either synchronous or conven tional swit ching PWM contro... See More ⇒

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MOS-TECH Semiconductor Co.,LTD Mar 2010 MT3205 N-Channel Power MOSFET 55V, 110A, 7.2m Features Description RDS(on) = 6.1m ( Typ.)@ VGS = 10V, ID = 59A This N-Channel MOSFET is produced using MOS-TECH Semiconductor s advanced PowerTrench process that has High performance trench technology for extermly low RDS(on) been especially tailored to minimize ... See More ⇒

Detailed specifications: 12N65KL-TA, 12N65KL-TQ, 12N65KG-TA, 12N65KG-TF, 12N65KG-TQ, HY3306P, HY3306B, IRFS630B, K4145, SVF5N60T, SVF5N60F, SVF5N60D, SVF5N60MJ, TSP5N60M, TSF5N60M, AO6414, MC6414