All MOSFET. SVF5N60F Datasheet

 

SVF5N60F Datasheet and Replacement


   Type Designator: SVF5N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 28.4 nS
   Cossⓘ - Output Capacitance: 62.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.15 Ohm
   Package: TO220F
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SVF5N60F Datasheet (PDF)

 ..1. Size:528K  1
 svf5n60t svf5n60f svf5n60d svf5n60mj.pdf pdf_icon

SVF5N60F

SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior

 ..2. Size:563K  silan
 svf5n60f svf5n60d svf5n60k.pdf pdf_icon

SVF5N60F

SVF5N60F/D/K 5A600V N 2SVF5N60F/D/K N MOS F-CellTM VDMOS 1133TO-252-2L 1.

 ..3. Size:479K  silan
 svf5n60t svf5n60f svf5n60d svf5n60mj.pdf pdf_icon

SVF5N60F

SVF5N60T/F/D/MJ 5A600V N 2SVF5N60T/F/D/MJ NMOSF-CellTMVDMOS 1 TO-252-2L3

 ..4. Size:458K  silan
 svf5n60f svf5n60dtr svf5n60k.pdf pdf_icon

SVF5N60F

SVF5N60F/D/K 5A600V N 2SVF5N60F/D/K N MOS 1 1 F-CellTM VDMOS 3TO-252-2L3 1.

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Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: FDME430NT | ELM13401CA | 12N65KG-TF1-T | NCEP85T12D | R5016ANJ | DH150N12B | BSB280N15NZ3G

Keywords - SVF5N60F MOSFET datasheet

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