SVF5N60D Datasheet. Specs and Replacement

Type Designator: SVF5N60D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28.4 nS

Cossⓘ - Output Capacitance: 62.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.15 Ohm

Package: TO252

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SVF5N60D datasheet

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SVF5N60D

SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior... See More ⇒

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SVF5N60D

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SVF5N60D

SVF5N60T/F/D/MJ 5A 600V N 2 SVF5N60T/F/D/MJ N MOS F-CellTM VDMOS 1 TO-252-2L 3 ... See More ⇒

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SVF5N60D

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Detailed specifications: 12N65KG-TF, 12N65KG-TQ, HY3306P, HY3306B, IRFS630B, MT3203, SVF5N60T, SVF5N60F, 5N65, SVF5N60MJ, TSP5N60M, TSF5N60M, AO6414, MC6414, CMP40P03, CSD40N70, FQPF20N60

Keywords - SVF5N60D MOSFET specs

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