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SVF5N60D PDF Specs and Replacement


   Type Designator: SVF5N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 28.4 nS
   Cossⓘ - Output Capacitance: 62.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.15 Ohm
   Package: TO252
 

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SVF5N60D PDF Specs

 ..1. Size:528K  1
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SVF5N60D

SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior... See More ⇒

 ..2. Size:563K  silan
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SVF5N60D

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 ..3. Size:479K  silan
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SVF5N60D

SVF5N60T/F/D/MJ 5A 600V N 2 SVF5N60T/F/D/MJ N MOS F-CellTM VDMOS 1 TO-252-2L 3 ... See More ⇒

Detailed specifications: 12N65KG-TF , 12N65KG-TQ , HY3306P , HY3306B , IRFS630B , MT3203 , SVF5N60T , SVF5N60F , 12N60 , SVF5N60MJ , TSP5N60M , TSF5N60M , AO6414 , MC6414 , CMP40P03 , CSD40N70 , FQPF20N60 .

Keywords - SVF5N60D MOSFET specs

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