All MOSFET. CSD40N70 Datasheet

 

CSD40N70 Datasheet and Replacement


   Type Designator: CSD40N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO252
 

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CSD40N70 Datasheet (PDF)

 ..1. Size:825K  1
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CSD40N70

CSD40N70 N-Channel Trench Power MOSFET General Description The CSD40N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 40V,ID =60A R

 9.1. Size:376K  cdil
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CSD40N70

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package CSD401CSD401 NPN PLASTIC POWER TRANSISTORComplementary CSB546TV Vertical Deflection Output ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.401

Datasheet: SVF5N60F , SVF5N60D , SVF5N60MJ , TSP5N60M , TSF5N60M , AO6414 , MC6414 , CMP40P03 , IRFP450 , FQPF20N60 , FQP20N60 , FTD06N03NA , GPT18N50GN3P , GPT18N50GN247 , GPT18N50DGN220FP , HY1001P , HY3610P .

History: APT1004R2KN | SWD056R68E7T

Keywords - CSD40N70 MOSFET datasheet

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