CSD40N70 PDF and Equivalents Search

 

CSD40N70 Specs and Replacement

Type Designator: CSD40N70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO252

CSD40N70 substitution

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CSD40N70 datasheet

 ..1. Size:825K  1
 csd40n70.pdf pdf_icon

CSD40N70

CSD40N70 N-Channel Trench Power MOSFET General Description The CSD40N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 40V,ID =60A R ... See More ⇒

 9.1. Size:376K  cdil
 csd401.pdf pdf_icon

CSD40N70

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSD401 CSD401 NPN PLASTIC POWER TRANSISTOR Complementary CSB546 TV Vertical Deflection Output Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40 1 ... See More ⇒

Detailed specifications: SVF5N60F, SVF5N60D, SVF5N60MJ, TSP5N60M, TSF5N60M, AO6414, MC6414, CMP40P03, NCEP15T14, FQPF20N60, FQP20N60, FTD06N03NA, GPT18N50GN3P, GPT18N50GN247, GPT18N50DGN220FP, HY1001P, HY3610P

Keywords - CSD40N70 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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