FTD06N03NA Specs and Replacement
Type Designator: FTD06N03NA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 356 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO252
FTD06N03NA substitution
- MOSFET ⓘ Cross-Reference Search
FTD06N03NA datasheet
ftd06n03na.pdf
FTD06N03NA N-Channel MOSFET Lead Free Package and Finish Applications Adaptor ID Silicon ID Package VDSS RDS(ON)(Typ.) Charger limited current limited SMPS 30V 3.6m 90A 60A Features RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Informati... See More ⇒
ftu06n70c ftd06n70c.pdf
FTU06N70C/FTD06N70C Doc. NO QRD-310 700V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features 700V 1.8 6.0A Low ON Resistance Low Gate Charge Fast Switching 100% Avalanche Tested D RoHS Compliant/Lead Free Halogen-free available Applications G G High Efficiency SMPS D S G S Adaptor/Charger D S Active PFC To-252 ... See More ⇒
Detailed specifications: TSP5N60M, TSF5N60M, AO6414, MC6414, CMP40P03, CSD40N70, FQPF20N60, FQP20N60, IRFP450, GPT18N50GN3P, GPT18N50GN247, GPT18N50DGN220FP, HY1001P, HY3610P, ISA07N65A, JCS13N50FT, JCS3205CH
Keywords - FTD06N03NA MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SVD501DEAG | HX3415 | SUD50N06-07L | M7002NND03 | 2SK1012 | EMB22A04G | SVD540T
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