All MOSFET. FTD06N03NA Datasheet

 

FTD06N03NA Datasheet and Replacement


   Type Designator: FTD06N03NA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 356 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252
 

 FTD06N03NA substitution

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FTD06N03NA Datasheet (PDF)

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FTD06N03NA

FTD06N03NA N-Channel MOSFET Lead Free Package and Finish Applications: Adaptor ID Silicon ID Package VDSS RDS(ON)(Typ.) Charger limited current limited SMPS 30V 3.6m 90A 60A Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Informati

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FTD06N03NA

FTU06N70C/FTD06N70C Doc. NO: QRD-310 700V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features 700V 1.8 6.0A Low ON Resistance Low Gate Charge Fast Switching 100% Avalanche Tested D RoHS Compliant/Lead Free Halogen-free available Applications GG High Efficiency SMPS DSGS Adaptor/Charger DS Active PFC To-252

Datasheet: TSP5N60M , TSF5N60M , AO6414 , MC6414 , CMP40P03 , CSD40N70 , FQPF20N60 , FQP20N60 , IRF1407 , GPT18N50GN3P , GPT18N50GN247 , GPT18N50DGN220FP , HY1001P , HY3610P , ISA07N65A , JCS13N50FT , JCS3205CH .

History: HY5012A | HUF75337S3 | STB15NM60ND | CLY2 | SFW025N100C3 | IRFZ46ZS | HUFA75321D3S

Keywords - FTD06N03NA MOSFET datasheet

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