GPT18N50GN247 PDF and Equivalents Search

 

GPT18N50GN247 Specs and Replacement

Type Designator: GPT18N50GN247

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 198 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69.3 nS

Cossⓘ - Output Capacitance: 275.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO247

GPT18N50GN247 substitution

- MOSFET ⓘ Cross-Reference Search

 

GPT18N50GN247 datasheet

 5.1. Size:1493K  1
 gpt18n50g gpt18n50dg.pdf pdf_icon

GPT18N50GN247

GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 4 GPT18N50 / GPT18N50D POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220F 2013/6/26 Rev1.6 Greatpower Microelectronic Corp. Page 5 GPT18N50 / GPT18N50D ... See More ⇒

Detailed specifications: AO6414, MC6414, CMP40P03, CSD40N70, FQPF20N60, FQP20N60, FTD06N03NA, GPT18N50GN3P, AO4407, GPT18N50DGN220FP, HY1001P, HY3610P, ISA07N65A, JCS13N50FT, JCS3205CH, JCS3205SH, KIA2906A-220

Keywords - GPT18N50GN247 MOSFET specs

 GPT18N50GN247 cross reference

 GPT18N50GN247 equivalent finder

 GPT18N50GN247 pdf lookup

 GPT18N50GN247 substitution

 GPT18N50GN247 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.