All MOSFET. HY1001P Datasheet

 

HY1001P Datasheet and Replacement


   Type Designator: HY1001P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 15.6 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220
      - MOSFET Cross-Reference Search

 

HY1001P Datasheet (PDF)

 ..1. Size:1041K  1
 hy1001p.pdf pdf_icon

HY1001P

HY1001M/PN-Channel Enhancement Mode MOSFETFeatures 70V/75A,GRDS(ON)=7.8m (typ.) @ VGS=10VSDDS Avalanche RatedG Reliable and RuggedTO-220 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management for Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeP : TO220-3LP Date CodeYYWWHY1001

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: VSP005N03MS | DH150N12B | 12N65KG-TF1-T | AUIRF1010Z | R5016ANJ | BSB280N15NZ3G | ELM13401CA

Keywords - HY1001P MOSFET datasheet

 HY1001P cross reference
 HY1001P equivalent finder
 HY1001P lookup
 HY1001P substitution
 HY1001P replacement

 

 
Back to Top

 


 
.