HY1001P PDF and Equivalents Search

 

HY1001P Specs and Replacement

Type Designator: HY1001P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 105 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.6 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220

HY1001P substitution

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HY1001P datasheet

 ..1. Size:1041K  1
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HY1001P

HY1001M/P N-Channel Enhancement Mode MOSFET Features 70V/75A, G RDS(ON)=7.8m (typ.) @ VGS=10V S D D S Avalanche Rated G Reliable and Rugged TO-220 Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Management for Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code P TO220-3L P Date Code YYWW HY1001... See More ⇒

Detailed specifications: CMP40P03, CSD40N70, FQPF20N60, FQP20N60, FTD06N03NA, GPT18N50GN3P, GPT18N50GN247, GPT18N50DGN220FP, 4N60, HY3610P, ISA07N65A, JCS13N50FT, JCS3205CH, JCS3205SH, KIA2906A-220, KIA2906A-247, KIA50N06

Keywords - HY1001P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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