All MOSFET. HY1001P Datasheet

 

HY1001P MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY1001P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 83 nC
   trⓘ - Rise Time: 15.6 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220

 HY1001P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY1001P Datasheet (PDF)

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 hy1001p.pdf

HY1001P HY1001P

HY1001M/PN-Channel Enhancement Mode MOSFETFeatures 70V/75A,GRDS(ON)=7.8m (typ.) @ VGS=10VSDDS Avalanche RatedG Reliable and RuggedTO-220 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management for Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeP : TO220-3LP Date CodeYYWWHY1001

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HY1403D

 

 
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