HY3610P PDF and Equivalents Search

 

HY3610P Specs and Replacement

Type Designator: HY3610P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 380 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 996 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO220

HY3610P substitution

- MOSFET ⓘ Cross-Reference Search

 

HY3610P datasheet

 ..1. Size:1128K  1
 hy3610p.pdf pdf_icon

HY3610P

HY3610P N-Channel Enhancement Mode MOSFET Features Pin Description 100V/160A RDS(ON)= 4.5 m (typ.) @ VGS=10V 100% avalanche tested G D Reliable and Rugged S Lead Free and Green Devices Available D (RoHS Compliant) Applications G Switching application Power Management for Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code P ... See More ⇒

Detailed specifications: CSD40N70, FQPF20N60, FQP20N60, FTD06N03NA, GPT18N50GN3P, GPT18N50GN247, GPT18N50DGN220FP, HY1001P, IRFP250, ISA07N65A, JCS13N50FT, JCS3205CH, JCS3205SH, KIA2906A-220, KIA2906A-247, KIA50N06, NTD4963NG

Keywords - HY3610P MOSFET specs

 HY3610P cross reference

 HY3610P equivalent finder

 HY3610P pdf lookup

 HY3610P substitution

 HY3610P replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.