All MOSFET. PFP13N60 Datasheet

 

PFP13N60 Datasheet and Replacement


   Type Designator: PFP13N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.51 Ohm
   Package: TO220
 

 PFP13N60 substitution

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PFP13N60 Datasheet (PDF)

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PFP13N60

Feb 2009 PFP13N60/PFF13N60 FEATURES 600V N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Drain BVDSS = 600 V Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Gate RDS(on) = 0.51 Unequalled Gate Charge : 48 nC (Typ.)

Datasheet: ISA07N65A , JCS13N50FT , JCS3205CH , JCS3205SH , KIA2906A-220 , KIA2906A-247 , KIA50N06 , NTD4963NG , 2N60 , PFF13N60 , QM3054M6 , SVD730D , SVD730F , SVD730T , TP0202T , TP0610K , TTK2837 .

History: NCE01P30L | DMTH10H005SCT | SVG036R8NL5 | AUIRL1404ZS | HY1904D | AOD2N100 | SSG4224

Keywords - PFP13N60 MOSFET datasheet

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