All MOSFET. PFF13N60 Datasheet

 

PFF13N60 Datasheet and Replacement


   Type Designator: PFF13N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.51 Ohm
   Package: TO220F
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PFF13N60 Datasheet (PDF)

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PFF13N60

Feb 2009 PFP13N60/PFF13N60 FEATURES 600V N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Drain BVDSS = 600 V Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Gate RDS(on) = 0.51 Unequalled Gate Charge : 48 nC (Typ.)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: GSM9435WS | STF40N60M2 | AUIRL3705ZS | SL7N65C | IXFK120N20 | SSM4423GM | SM2204NSQG

Keywords - PFF13N60 MOSFET datasheet

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