PFF13N60 Specs and Replacement
Type Designator: PFF13N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.51 Ohm
Package: TO220F
PFF13N60 substitution
- MOSFET ⓘ Cross-Reference Search
PFF13N60 datasheet
pfp13n60 pff13n60.pdf
Feb 2009 PFP13N60/PFF13N60 FEATURES 600V N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Drain BVDSS = 600 V Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Gate RDS(on) = 0.51 Unequalled Gate Charge 48 nC (Typ.) ... See More ⇒
Detailed specifications: JCS13N50FT, JCS3205CH, JCS3205SH, KIA2906A-220, KIA2906A-247, KIA50N06, NTD4963NG, PFP13N60, IRF520, QM3054M6, SVD730D, SVD730F, SVD730T, TP0202T, TP0610K, TTK2837, UT70N03G
Keywords - PFF13N60 MOSFET specs
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