PFF13N60 Datasheet and Replacement
Type Designator: PFF13N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 47.5 nC
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.51 Ohm
Package: TO220F
PFF13N60 substitution
PFF13N60 Datasheet (PDF)
pfp13n60 pff13n60.pdf
Feb 2009 PFP13N60/PFF13N60 FEATURES 600V N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Drain BVDSS = 600 V Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Gate RDS(on) = 0.51 Unequalled Gate Charge : 48 nC (Typ.)
Datasheet: JCS13N50FT , JCS3205CH , JCS3205SH , KIA2906A-220 , KIA2906A-247 , KIA50N06 , NTD4963NG , PFP13N60 , IRF520 , QM3054M6 , SVD730D , SVD730F , SVD730T , TP0202T , TP0610K , TTK2837 , UT70N03G .
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