SVD730F Datasheet and Replacement
Type Designator: SVD730F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 15.5 nC
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 69 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO220F
SVD730F substitution
SVD730F Datasheet (PDF)
svd730d svd730f svd730t.pdf
SVD730D/F/T_Datasheet 5.5A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD730D/F/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryS-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
Datasheet: KIA2906A-220 , KIA2906A-247 , KIA50N06 , NTD4963NG , PFP13N60 , PFF13N60 , QM3054M6 , SVD730D , IRFZ24N , SVD730T , TP0202T , TP0610K , TTK2837 , UT70N03G , DG4N65-TO251 , DG4N65-TO252 , DG4N65-TO220 .
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