DG4N65-TO252 Specs and Replacement
Type Designator: DG4N65-TO252
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 59 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO252
DG4N65-TO252 substitution
- MOSFET ⓘ Cross-Reference Search
DG4N65-TO252 datasheet
Detailed specifications: SVD730D, SVD730F, SVD730T, TP0202T, TP0610K, TTK2837, UT70N03G, DG4N65-TO251, STP65NF06, DG4N65-TO220, DG4N65-TO220F, DG4N65-TO262, HY3403D, HY3403U, HY3403V, HY3410P, HY3410M
Keywords - DG4N65-TO252 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: ME90N03 | HD840U
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