All MOSFET. DG4N65-TO252 Datasheet

 

DG4N65-TO252 Datasheet and Replacement


   Type Designator: DG4N65-TO252
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO252
 

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DG4N65-TO252 Datasheet (PDF)

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DG4N65-TO252

DG4N65V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG4N65N

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DG4N65-TO252

DG4N60V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG4N60N

Datasheet: SVD730D , SVD730F , SVD730T , TP0202T , TP0610K , TTK2837 , UT70N03G , DG4N65-TO251 , STP65NF06 , DG4N65-TO220 , DG4N65-TO220F , DG4N65-TO262 , HY3403D , HY3403U , HY3403V , HY3410P , HY3410M .

History: IRFU2607Z

Keywords - DG4N65-TO252 MOSFET datasheet

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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