CRTS084NE6N MOSFET Datasheet: N-Ch, 68V, 83A. Full specification with pinout and replacement list

CRTS084NE6N Specs and Replacement

Type Designator: CRTS084NE6N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 111 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 83 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 292 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm

Package: TO263

CRTS084NE6N substitution

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CRTS084NE6N datasheet

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CRTS084NE6N ( ) Trench N-MOSFET 68V, 6.8m , 83A Features Product Summary VDS Uses CRM(CQ) advanced Trench technology 68V Extremely low on-resistance RDS(on) RDS(on) typ. 6.8m Excellent QgxRDS(on) product(FOM) ID 83A Qualified according to JEDEC criteria 100% DVDS Tested 100% DVDS Tested 100% DVDS Tested Applications 100% Avalanch... See More ⇒

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CRTS030N04L ( ) Trench N-MOSFET 40V, 2.8m , 80A Features Product Summary VDS Uses CRM(CQ) advanced Trench technology 40V Extremely low on-resistance RDS(on) RDS(on) typ. 2.8m Excellent QgxRDS(on) product(FOM) ID 80A Qualified according to JEDEC criteria 100% DVDS Tested 100% DVDS Tested 100% DVDS Tested Applications Motor con... See More ⇒

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CRTS095N12N ( ) Trench N-MOSFET 120V, 7m , 112A Features Product Summary VDS Uses CRM(CQ) advanced Trench technology 120V Extremely low on-resistance RDS(on) RDS(on) typ. 7m Excellent QgxRDS(on) product(FOM) ID 112A Qualified according to JEDEC criteria 100% DVDS Tested 100% DVDS Tested 100% DVDS Tested Applications 100% Avalanch... See More ⇒

Detailed specifications: JCS3910V, JCS3910R, MMD65R900QRH, S68N08R, S68N08S, SVF10N65F, SVF10N65T, STD448S, IRF3205, HY3210P, HY3210M, HY3210B, HY3210PS, HY3210PM, JCS8N60S, JCS8N60B, JCS8N60C