SUV90N06-05 MOSFET. Datasheet pdf. Equivalent
Type Designator: SUV90N06-05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 350 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 90 A
Maximum Junction Temperature (Tj): 200 °C
Total Gate Charge (Qg): 155 nC
Rise Time (tr): 90 nS
Drain-Source Capacitance (Cd): 1050 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0052 Ohm
Package: TO262
SUV90N06-05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUV90N06-05 Datasheet (PDF)
0.1. suv90n06-05.pdf 
Size:43K _1
SUV90N06-05New ProductVishay SiliconixN-Channel 60-V (D-S) 200_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETSV(BR)DSS (V) rDS(on) (W) ID (A)D 200_C Junction Temperature0.0052 @ VGS = 10 VD PWM Optimized60 90 a0.0072 @ VGS = 4.5 VAPPLICATIONSD Isolated DC/DC Converters- Primary-Side SwitchD Automotive- Fan MotorsDTO-262- 12-V Boardnet- Motor D
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