All MOSFET. SUV90N06-05 Datasheet

 

SUV90N06-05 Datasheet and Replacement


   Type Designator: SUV90N06-05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 350 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 200 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: TO262
 

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SUV90N06-05 Datasheet (PDF)

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SUV90N06-05

SUV90N06-05New ProductVishay SiliconixN-Channel 60-V (D-S) 200_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETSV(BR)DSS (V) rDS(on) (W) ID (A)D 200_C Junction Temperature0.0052 @ VGS = 10 VD PWM Optimized60 90 a0.0072 @ VGS = 4.5 VAPPLICATIONSD Isolated DC/DC Converters- Primary-Side SwitchD Automotive- Fan MotorsDTO-262- 12-V Boardnet- Motor D

Datasheet: JCS8N60S , JCS8N60B , JCS8N60C , JCS8N60F , ME4953 , SI4914DY , SSP60N05 , SSP60N06 , 10N60 , SVF740T , SVF740F , AOB9N70 , AOTF29S50L , AOTF9N70L , AOW66412 , FMV60N190S2HF , JCS650C .

History: FQD3N60CTM-WS | TJ9A10M3 | WMJ15N80M3 | IRFR9210PBF | MTB030N10RQ8 | WMO15N65F2 | IRF7530

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