JCS650C MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS650C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 158 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 28 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 103 nC
Rise Time (tr): 251 nS
Drain-Source Capacitance (Cd): 362 pF
Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm
Package: TO220C
JCS650C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS650C Datasheet (PDF)
0.1. jcs650c jcs650f jcs650s.pdf 
Size:488K _1
N N- CHANNEL MOSFETR JCS650 MAIN CHARACTERISTICS Package ID 28.0A VDSS 200 V Rdson@Vgs=10V 0.085 Qg 103nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA
8.1. jcs650s.pdf Size:255K _inchange_semiconductor
isc N-Channel MOSFET Transistor JCS650SFEATURESDrain Current I = 28A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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