All MOSFET. JCS650C Datasheet

 

JCS650C MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS650C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 158 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 103 nC
   trⓘ - Rise Time: 251 nS
   Cossⓘ - Output Capacitance: 362 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO220C

 JCS650C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS650C Datasheet (PDF)

 ..1. Size:488K  1
 jcs650c jcs650f jcs650s.pdf

JCS650C JCS650C

N N- CHANNEL MOSFETR JCS650 MAIN CHARACTERISTICS Package ID 28.0A VDSS 200 V Rdson@Vgs=10V 0.085 Qg 103nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA

 ..2. Size:947K  jilin sino
 jcs650c jcs650f jcs650s.pdf

JCS650C JCS650C

N N- CHANNEL MOSFET R JCS650 MAIN CHARACTERISTICS Package ID 28.0A VDSS 200 V Rdson-max 85m @Vgs=10V Qg-typ 103nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 8.1. Size:255K  inchange semiconductor
 jcs650s.pdf

JCS650C JCS650C

isc N-Channel MOSFET Transistor JCS650SFEATURESDrain Current I = 28A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top