JCS650F
MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS650F
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 28
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 103
nC
trⓘ - Rise Time: 251
nS
Cossⓘ -
Output Capacitance: 362
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085
Ohm
Package:
TO220MF
JCS650F
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS650F
Datasheet (PDF)
..1. Size:488K 1
jcs650c jcs650f jcs650s.pdf 
N N- CHANNEL MOSFETR JCS650 MAIN CHARACTERISTICS Package ID 28.0A VDSS 200 V Rdson@Vgs=10V 0.085 Qg 103nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA
..2. Size:947K jilin sino
jcs650c jcs650f jcs650s.pdf
N N- CHANNEL MOSFET R JCS650 MAIN CHARACTERISTICS Package ID 28.0A VDSS 200 V Rdson-max 85m @Vgs=10V Qg-typ 103nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
8.1. Size:255K inchange semiconductor
jcs650s.pdf
isc N-Channel MOSFET Transistor JCS650SFEATURESDrain Current I = 28A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: FQT7N10L
, FDP083N15A
, FQU10N20C
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, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, FQU2N60C
, FDMC8030
.
