All MOSFET. JCS650F Datasheet


JCS650F MOSFET. Datasheet pdf. Equivalent

Type Designator: JCS650F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 28 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 103 nC

Rise Time (tr): 251 nS

Drain-Source Capacitance (Cd): 362 pF

Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm

Package: TO220MF

JCS650F Transistor Equivalent Substitute - MOSFET Cross-Reference Search


JCS650F Datasheet (PDF)

0.1. jcs650c jcs650f jcs650s.pdf Size:488K _1


N N- CHANNEL MOSFETR JCS650 MAIN CHARACTERISTICS Package ID 28.0A VDSS 200 V Rdson@Vgs=10V 0.085 Qg 103nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA

8.1. jcs650s.pdf Size:255K _inchange_semiconductor


isc N-Channel MOSFET Transistor JCS650SFEATURESDrain Current I = 28A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose


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