All MOSFET. STE36N50A Datasheet

 

STE36N50A Datasheet and Replacement


   Type Designator: STE36N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 410 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: ISOTOP
 

 STE36N50A substitution

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STE36N50A Datasheet (PDF)

 ..1. Size:155K  1
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STE36N50A

STE36N50AN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE V R IDSS DS(on) DSTE36N50A 500 V

 6.1. Size:25K  1
 ste24n90 ste36n50-da ste36n50-dk ste38n60 ste38na50 ste45n50 ste50n40 ste90n25.pdf pdf_icon

STE36N50A

TRANSISTORSPOWER MODULESBIPOLAR IN ISOTOPFor other conf.VCEO VCEV IC Ptot VCE (sat) @IC / IB ts* tf*Conf. Type(V) (V) (A) (W) (V) (A) (A) (s) (s)D ESM2012DV 125 150 120 175 2 100 1 0.9 0.15A BUT30V 125 200 100 250 1.5 100 10 1.0 0.1B BUT230V 125 200 200 300 1.9 200 20 1.0 0.1A BUT32V 300 400 80 250 1.9 40 4 1.9 0.12D ESM2030DV 300 400 67 150 2.2 56 1.6 2.0 0.35B BUT2

 6.2. Size:252K  1
 ste36n50.pdf pdf_icon

STE36N50A

Datasheet: R6006KNX , R6007JND3 , R6007JNJ , R6007JNX , SSF7N60B , SSI7N60B , SSW7N60B , STE40NA60 , TK10A60D , STE45NK80ZD , STE38NB50 , STE38NB50F , STE24NA100 , STE15NA100 , AO3409L , FTP23N10A , HY3003P .

History: FDMS86263P

Keywords - STE36N50A MOSFET datasheet

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