STE36N50A Datasheet and Replacement
Type Designator: STE36N50A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 410 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 1300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: ISOTOP
STE36N50A substitution
STE36N50A Datasheet (PDF)
ste36n50a.pdf

STE36N50AN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE V R IDSS DS(on) DSTE36N50A 500 V
ste24n90 ste36n50-da ste36n50-dk ste38n60 ste38na50 ste45n50 ste50n40 ste90n25.pdf

TRANSISTORSPOWER MODULESBIPOLAR IN ISOTOPFor other conf.VCEO VCEV IC Ptot VCE (sat) @IC / IB ts* tf*Conf. Type(V) (V) (A) (W) (V) (A) (A) (s) (s)D ESM2012DV 125 150 120 175 2 100 1 0.9 0.15A BUT30V 125 200 100 250 1.5 100 10 1.0 0.1B BUT230V 125 200 200 300 1.9 200 20 1.0 0.1A BUT32V 300 400 80 250 1.9 40 4 1.9 0.12D ESM2030DV 300 400 67 150 2.2 56 1.6 2.0 0.35B BUT2
Datasheet: R6006KNX , R6007JND3 , R6007JNJ , R6007JNX , SSF7N60B , SSI7N60B , SSW7N60B , STE40NA60 , AO4407 , STE45NK80ZD , STE38NB50 , STE38NB50F , STE24NA100 , STE15NA100 , AO3409L , FTP23N10A , HY3003P .
History: RZL035P01TR | SDF240 | WMJ53N60C4 | SM2312NSA | WMO15N65C2 | 3SK162 | BSF053N03LTG
Keywords - STE36N50A MOSFET datasheet
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History: RZL035P01TR | SDF240 | WMJ53N60C4 | SM2312NSA | WMO15N65C2 | 3SK162 | BSF053N03LTG



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