STE45NK80ZD PDF and Equivalents Search

 

STE45NK80ZD Specs and Replacement

Type Designator: STE45NK80ZD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 600 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 128 nS

Cossⓘ - Output Capacitance: 1620 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: ISOTOP

STE45NK80ZD substitution

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STE45NK80ZD datasheet

 ..1. Size:226K  1
 ste45nk80zd.pdf pdf_icon

STE45NK80ZD

STE45NK80ZD N-CHANNEL 800V - 0.11 - 45 A ISOTOP Super FREDMesh MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STE45NK80ZD 800 V ... See More ⇒

 ..2. Size:317K  st
 ste45nk80zd.pdf pdf_icon

STE45NK80ZD

STE45NK80ZD N-channel 800V - 0.11 - 45A ISOTOP SuperFREDmesh MOSFET General features Type VDSS RDS(on) ID Pw STE45NK80ZD 800V ... See More ⇒

 8.1. Size:25K  1
 ste24n90 ste36n50-da ste36n50-dk ste38n60 ste38na50 ste45n50 ste50n40 ste90n25.pdf pdf_icon

STE45NK80ZD

TRANSISTORS POWER MODULES BIPOLAR IN ISOTOP For other conf. VCEO VCEV IC Ptot VCE (sat) @IC / IB ts* tf* Conf. Type (V) (V) (A) (W) (V) (A) (A) ( s) ( s) D ESM2012DV 125 150 120 175 2 100 1 0.9 0.15 A BUT30V 125 200 100 250 1.5 100 10 1.0 0.1 B BUT230V 125 200 200 300 1.9 200 20 1.0 0.1 A BUT32V 300 400 80 250 1.9 40 4 1.9 0.12 D ESM2030DV 300 400 67 150 2.2 56 1.6 2.0 0.35 B BUT2... See More ⇒

Detailed specifications: R6007JND3, R6007JNJ, R6007JNX, SSF7N60B, SSI7N60B, SSW7N60B, STE40NA60, STE36N50A, AON7410, STE38NB50, STE38NB50F, STE24NA100, STE15NA100, AO3409L, FTP23N10A, HY3003P, HY3003B

Keywords - STE45NK80ZD MOSFET specs

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