All MOSFET. STE45NK80ZD Datasheet

 

STE45NK80ZD MOSFET. Datasheet pdf. Equivalent


   Type Designator: STE45NK80ZD
   Marking Code: E45NK80ZD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 558 nC
   trⓘ - Rise Time: 128 nS
   Cossⓘ - Output Capacitance: 1620 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: ISOTOP

 STE45NK80ZD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STE45NK80ZD Datasheet (PDF)

 ..1. Size:226K  1
 ste45nk80zd.pdf

STE45NK80ZD STE45NK80ZD

STE45NK80ZDN-CHANNEL 800V - 0.11 - 45 A ISOTOPSuper FREDMesh MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTE45NK80ZD 800 V

 ..2. Size:317K  st
 ste45nk80zd.pdf

STE45NK80ZD STE45NK80ZD

STE45NK80ZDN-channel 800V - 0.11 - 45A ISOTOPSuperFREDmesh MOSFETGeneral featuresType VDSS RDS(on) ID PwSTE45NK80ZD 800V

 8.1. Size:25K  1
 ste24n90 ste36n50-da ste36n50-dk ste38n60 ste38na50 ste45n50 ste50n40 ste90n25.pdf

STE45NK80ZD STE45NK80ZD

TRANSISTORSPOWER MODULESBIPOLAR IN ISOTOPFor other conf.VCEO VCEV IC Ptot VCE (sat) @IC / IB ts* tf*Conf. Type(V) (V) (A) (W) (V) (A) (A) (s) (s)D ESM2012DV 125 150 120 175 2 100 1 0.9 0.15A BUT30V 125 200 100 250 1.5 100 10 1.0 0.1B BUT230V 125 200 200 300 1.9 200 20 1.0 0.1A BUT32V 300 400 80 250 1.9 40 4 1.9 0.12D ESM2030DV 300 400 67 150 2.2 56 1.6 2.0 0.35B BUT2

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top