All MOSFET. STE38NB50 Datasheet

 

STE38NB50 Datasheet and Replacement


   Type Designator: STE38NB50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: ISOTOP
 

 STE38NB50 substitution

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STE38NB50 Datasheet (PDF)

 ..1. Size:289K  1
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STE38NB50

STE38NB50N - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE V R IDSS DS(on) DSTE38NB50 500 V

 ..2. Size:280K  st
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STE38NB50

STE38NB50N - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE V R IDSS DS(on) DSTE38NB50 500 V

 0.1. Size:95K  1
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STE38NB50

STE38NB50F N - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTE38NB50F 500 V

 0.2. Size:271K  st
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STE38NB50

STE38NB50FN - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTE38NB50F 500 V

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Datasheet: R6007JNJ , R6007JNX , SSF7N60B , SSI7N60B , SSW7N60B , STE40NA60 , STE36N50A , STE45NK80ZD , 4N60 , STE38NB50F , STE24NA100 , STE15NA100 , AO3409L , FTP23N10A , HY3003P , HY3003B , IPD70R900P7S .

History: R6535ENZ

Keywords - STE38NB50 MOSFET datasheet

 STE38NB50 cross reference
 STE38NB50 equivalent finder
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