STE38NB50 Datasheet and Replacement
Type Designator: STE38NB50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 38 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 159 nC
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 950 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: ISOTOP
STE38NB50 Datasheet (PDF)
ste38nb50.pdf

STE38NB50N - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE V R IDSS DS(on) DSTE38NB50 500 V
ste38nb50.pdf

STE38NB50N - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE V R IDSS DS(on) DSTE38NB50 500 V
ste38nb50f.pdf

STE38NB50F N - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTE38NB50F 500 V
ste38nb50f.pdf

STE38NB50FN - CHANNEL 500V - 0.11 - 38A - ISOTOPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTE38NB50F 500 V
Datasheet: R6007JNJ , R6007JNX , SSF7N60B , SSI7N60B , SSW7N60B , STE40NA60 , STE36N50A , STE45NK80ZD , 4N60 , STE38NB50F , STE24NA100 , STE15NA100 , AO3409L , FTP23N10A , HY3003P , HY3003B , IPD70R900P7S .
History: NTHD2110TT1G | SPI80N06S2-08 | SI4416DY
Keywords - STE38NB50 MOSFET datasheet
STE38NB50 cross reference
STE38NB50 equivalent finder
STE38NB50 lookup
STE38NB50 substitution
STE38NB50 replacement
History: NTHD2110TT1G | SPI80N06S2-08 | SI4416DY



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