MDE1991RH MOSFET. Datasheet pdf. Equivalent
Type Designator: MDE1991RH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 223 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 159 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 115 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 1360 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
Package: TO263
MDE1991RH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDE1991RH Datasheet (PDF)
mde1991rh.pdf
MDE1991 Single N-channel Trench MOSFET 100V, 120A, 4.4m Features General Description The MDE1991 uses advanced MagnaChips MV MOSFET V = 100V DS I = 120A @V = 10V Technology, which provides high performance in on-state resistance, D GS R DS(ON)fast switching performance, and excellent quality.
mde1932.pdf
MDE1932 Single N-channel Trench MOSFET 80V, 120A, 3.4m Features General Description The MDE1991 uses advanced MagnaChips MV MOSFET V = 80V DS I = 120A @V = 10V Technology, which provides high performance in on-state resistance, D GS R DS(ON)fast switching performance, and excellent quality.
mde1932.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDE1932FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
