MDE1991RH PDF and Equivalents Search

 

MDE1991RH Specs and Replacement

Type Designator: MDE1991RH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 223 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 159 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 1360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm

Package: TO263

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MDE1991RH datasheet

 ..1. Size:973K  1
 mde1991rh.pdf pdf_icon

MDE1991RH

MDE1991 Single N-channel Trench MOSFET 100V, 120A, 4.4m Features General Description The MDE1991 uses advanced MagnaChip s MV MOSFET V = 100V DS I = 120A @V = 10V Technology, which provides high performance in on-state resistance, D GS R DS(ON) fast switching performance, and excellent quality. ... See More ⇒

 9.1. Size:1009K  magnachip
 mde1932.pdf pdf_icon

MDE1991RH

MDE1932 Single N-channel Trench MOSFET 80V, 120A, 3.4m Features General Description The MDE1991 uses advanced MagnaChip s MV MOSFET V = 80V DS I = 120A @V = 10V Technology, which provides high performance in on-state resistance, D GS R DS(ON) fast switching performance, and excellent quality. ... See More ⇒

 9.2. Size:204K  inchange semiconductor
 mde1932.pdf pdf_icon

MDE1991RH

INCHANGE Semiconductor isc N-Channel MOSFET Transistor MDE1932 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM ... See More ⇒

Detailed specifications: STE38NB50F, STE24NA100, STE15NA100, AO3409L, FTP23N10A, HY3003P, HY3003B, IPD70R900P7S, STP80NF70, NCEP1520K, RJK6035DPP-E0, STK0160, 23N50, APT10M09LVFR, APT20M16LFLL, APT20M18LVFR, APT20M18LVR

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