MDE1991RH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MDE1991RH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 223
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 159
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 115
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 1360
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044
Ohm
Package:
TO263
MDE1991RH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDE1991RH
Datasheet (PDF)
..1. Size:973K 1
mde1991rh.pdf 
MDE1991 Single N-channel Trench MOSFET 100V, 120A, 4.4m Features General Description The MDE1991 uses advanced MagnaChips MV MOSFET V = 100V DS I = 120A @V = 10V Technology, which provides high performance in on-state resistance, D GS R DS(ON)fast switching performance, and excellent quality.
9.1. Size:1009K magnachip
mde1932.pdf
MDE1932 Single N-channel Trench MOSFET 80V, 120A, 3.4m Features General Description The MDE1991 uses advanced MagnaChips MV MOSFET V = 80V DS I = 120A @V = 10V Technology, which provides high performance in on-state resistance, D GS R DS(ON)fast switching performance, and excellent quality.
9.2. Size:204K inchange semiconductor
mde1932.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDE1932FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM
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