MDE1991RH - аналоги, параметры транзистора - Справочник транзисторов

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MDE1991 Single N-channel Trench MOSFET 100V, 120A, 4.4m Features General Description The MDE1991 uses advanced MagnaChip s MV MOSFET V = 100V DS I = 120A @V = 10V Technology, which provides high performance in on-state resistance, D GS R DS(ON) fast switching performance, and excellent quality.

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MDE1932 Single N-channel Trench MOSFET 80V, 120A, 3.4m Features General Description The MDE1991 uses advanced MagnaChip s MV MOSFET V = 80V DS I = 120A @V = 10V Technology, which provides high performance in on-state resistance, D GS R DS(ON) fast switching performance, and excellent quality.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor MDE1932 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM

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