R6010MNX Datasheet and Replacement
Type Designator: R6010MNX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-220F
R6010MNX substitution
R6010MNX Datasheet (PDF)
r6010mnx.pdf

R6010MNXDatasheetNch 600V 10A Power MOSFETlOutlinelVDSS600VRDS(on)(Max.) 0.380 TO-220FMID 10APD56W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed tobe 30V.5) Drive circuits can be simple.6) Pb-free p
r6010mnx.pdf

isc N-Channel MOSFET Transistor R6010MNXFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 380m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6010anx.pdf

Data Sheet10V Drive Nch MOSFET R6010ANX Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1.21) Low on-resistance.1.32) Fast switching speed.0.83) Gate-source voltage (VGSS) guaranteed to be 30V.(1) Gate2.54 2.54 0.75 2.64) Drive circuits can be simple. (2) Drain(1) (2) (3) (3) Source5) Parallel use is ea
Datasheet: R6007KNJ , R6007KNX , R6007MNJ , R6009JND3 , R6009JNJ , R6009JNX , R6009KNJ , R6009KNX , HY1906P , R6011KNX , R6015KNJ , R6015KNZ , R6020KNJ , R6020KNX , R6020KNZ , R6020KNZ1 , R6024KNJ .
History: NCE6003Y | STP20NF06L | HRLD80N06K | CEA6426 | 2SK1565 | VB1106K | IPP80N04S2-04
Keywords - R6010MNX MOSFET datasheet
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History: NCE6003Y | STP20NF06L | HRLD80N06K | CEA6426 | 2SK1565 | VB1106K | IPP80N04S2-04



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