R6010MNX Specs and Replacement
Type Designator: R6010MNX
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 900 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-220F
R6010MNX substitution
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R6010MNX datasheet
r6010mnx.pdf
R6010MNX Datasheet Nch 600V 10A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.380 TO-220FM ID 10A PD 56W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Pb-free p... See More ⇒
r6010mnx.pdf
isc N-Channel MOSFET Transistor R6010MNX FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 380m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
r6010anx.pdf
Data Sheet 10V Drive Nch MOSFET R6010ANX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Fast switching speed. 0.8 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate 2.54 2.54 0.75 2.6 4) Drive circuits can be simple. (2) Drain (1) (2) (3) (3) Source 5) Parallel use is ea... See More ⇒
Detailed specifications: R6007KNJ, R6007KNX, R6007MNJ, R6009JND3, R6009JNJ, R6009JNX, R6009KNJ, R6009KNX, AOD4184A, R6011KNX, R6015KNJ, R6015KNZ, R6020KNJ, R6020KNX, R6020KNZ, R6020KNZ1, R6024KNJ
Keywords - R6010MNX MOSFET specs
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