R6010MNX MOSFET. Datasheet pdf. Equivalent
Type Designator: R6010MNX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 900 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-220F
R6010MNX Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6010MNX Datasheet (PDF)
r6010mnx.pdf
R6010MNXDatasheetNch 600V 10A Power MOSFETlOutlinelVDSS600VRDS(on)(Max.) 0.380 TO-220FMID 10APD56W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed tobe 30V.5) Drive circuits can be simple.6) Pb-free p
r6010mnx.pdf
isc N-Channel MOSFET Transistor R6010MNXFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 380m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6010anx.pdf
Data Sheet10V Drive Nch MOSFET R6010ANX Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1.21) Low on-resistance.1.32) Fast switching speed.0.83) Gate-source voltage (VGSS) guaranteed to be 30V.(1) Gate2.54 2.54 0.75 2.64) Drive circuits can be simple. (2) Drain(1) (2) (3) (3) Source5) Parallel use is ea
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