R6010MNX - аналоги, параметры транзистора - Справочник транзисторов

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R6010MNX Datasheet Nch 600V 10A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.380 TO-220FM ID 10A PD 56W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Pb-free p

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isc N-Channel MOSFET Transistor R6010MNX FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 380m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

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Data Sheet 10V Drive Nch MOSFET R6010ANX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Fast switching speed. 0.8 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate 2.54 2.54 0.75 2.6 4) Drive circuits can be simple. (2) Drain (1) (2) (3) (3) Source 5) Parallel use is ea

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