RJ1G08CGN PDF and Equivalents Search

 

RJ1G08CGN Specs and Replacement

Type Designator: RJ1G08CGN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm

Package: TO-263

RJ1G08CGN substitution

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RJ1G08CGN datasheet

 ..1. Size:2542K  rohm
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RJ1G08CGN

RJ1G08CGN Datasheet Nch 40V 80A Power MOSFET lOutline l TO-263AB VDSS 40V RDS(on)(Max.) 5.6m LPT(L) ID 80A PD 78W lFeatures l lInner circuit l 1) Low on - resistance 2) High power small mold package (LPTL) 3) Pb-free plating ; RoHS compliant 4) 100% UIS tested lApplication l lPackaging specifications ... See More ⇒

 ..2. Size:254K  inchange semiconductor
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RJ1G08CGN

isc N-Channel MOSFET Transistor RJ1G08CGN FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

Detailed specifications: R6530KNZ1 , R6535ENZ , R6535ENZ1 , R6535KNZ , R6535KNZ1 , R8002ANJ , R8005ANJ , R8008ANJ , 2SK3568 , RJ1G12BGN , R6020KNZ4 , DJR0417 , R6035KNZ , R6035KNZ1 , R6047MNZ1 , R6547ENZ1 , R6547KNZ1 .

History: FDD10AN06A0 | CSD18501Q5A

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