All MOSFET. RJ1G08CGN Datasheet

 

RJ1G08CGN MOSFET. Datasheet pdf. Equivalent


   Type Designator: RJ1G08CGN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31.1 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: TO-263

 RJ1G08CGN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJ1G08CGN Datasheet (PDF)

 ..1. Size:2542K  rohm
 rj1g08cgn.pdf

RJ1G08CGN RJ1G08CGN

RJ1G08CGNDatasheetNch 40V 80A Power MOSFETlOutlinel TO-263ABVDSS 40VRDS(on)(Max.)5.6m LPT(L)ID80APD 78W lFeaturesllInner circuitl1) Low on - resistance2) High power small mold package(LPTL)3) Pb-free plating ; RoHS compliant4) 100% UIS testedlApplicationllPackaging specifications

 ..2. Size:254K  inchange semiconductor
 rj1g08cgn.pdf

RJ1G08CGN RJ1G08CGN

isc N-Channel MOSFET Transistor RJ1G08CGNFEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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