All MOSFET. RJ1G08CGN Datasheet


RJ1G08CGN MOSFET. Datasheet pdf. Equivalent

Type Designator: RJ1G08CGN

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 78 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 31.1 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 370 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0056 Ohm

Package: TO-263

RJ1G08CGN Transistor Equivalent Substitute - MOSFET Cross-Reference Search


RJ1G08CGN Datasheet (PDF)

0.1. rj1g08cgn.pdf Size:2542K _rohm


RJ1G08CGNDatasheetNch 40V 80A Power MOSFETlOutlinel TO-263ABVDSS 40VRDS(on)(Max.)5.6m LPT(L)ID80APD 78W lFeaturesllInner circuitl1) Low on - resistance2) High power small mold package(LPTL)3) Pb-free plating ; RoHS compliant4) 100% UIS testedlApplicationllPackaging specifications

0.2. rj1g08cgn.pdf Size:254K _inchange_semiconductor


isc N-Channel MOSFET Transistor RJ1G08CGNFEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo


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