DJR0417 MOSFET Datasheet: P-Ch, 40V, 17A. Full specification with pinout and replacement list

DJR0417 Specs and Replacement

Type Designator: DJR0417

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 450 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO-252

DJR0417 substitution

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DJR0417 datasheet

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40 V, 17 A P-channel Trench Power MOSFET with Reverse Battery Protection DJR0417 Data Sheet Description DJR0417 is P-channel trench power MOSFET Package designed for the load switch of automotive electronic units requiring the reverse battery protection. Since TO252 DJR0417 has a bidirectional diode between Drain and Source, the reverse battery protection can be realized (4)... See More ⇒

..2. Size:266K inchange semiconductor
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isc P-Channel MOSFET Transistor DJR0417 FEATURES Drain Current I =-17A@ T =25 D C Drain Source Voltage- V =-40V(Min) DSS Static Drain-Source On-Resistance R =75m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒

Detailed specifications: R6535KNZ, R6535KNZ1, R8002ANJ, R8005ANJ, R8008ANJ, RJ1G08CGN, RJ1G12BGN, R6020KNZ4, RFP50N06, R6035KNZ, R6035KNZ1, R6047MNZ1, R6547ENZ1, R6547KNZ1, R6576ENZ1, R6576KNZ1, RD3G400GN