All MOSFET. DJR0417 Datasheet

 

DJR0417 Datasheet and Replacement


   Type Designator: DJR0417
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 450 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO-252
 

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DJR0417 Datasheet (PDF)

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DJR0417

40 V, 17 A P-channel Trench Power MOSFET with Reverse Battery Protection DJR0417 Data Sheet Description DJR0417 is P-channel trench power MOSFET Package designed for the load switch of automotive electronic units requiring the reverse battery protection. Since TO252 DJR0417 has a bidirectional diode between Drain and Source, the reverse battery protection can be realized (4)

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DJR0417

isc P-Channel MOSFET Transistor DJR0417FEATURESDrain Current I =-17A@ T =25D CDrain Source Voltage-: V =-40V(Min)DSSStatic Drain-Source On-Resistance: R =75m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: R6535KNZ , R6535KNZ1 , R8002ANJ , R8005ANJ , R8008ANJ , RJ1G08CGN , RJ1G12BGN , R6020KNZ4 , SKD502T , R6035KNZ , R6035KNZ1 , R6047MNZ1 , R6547ENZ1 , R6547KNZ1 , R6576ENZ1 , R6576KNZ1 , RD3G400GN .

History: WML10N70C4 | IRFSL7762 | STP46NF30 | R6524ENJ | WMO18N50C4 | OSG50R500AF | STL140N6F7

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