All MOSFET. RD3G400GN Datasheet

 

RD3G400GN MOSFET. Datasheet pdf. Equivalent


   Type Designator: RD3G400GN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 5.6 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO-252

 RD3G400GN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RD3G400GN Datasheet (PDF)

 ..1. Size:1493K  rohm
rd3g400gn.pdf

RD3G400GN
RD3G400GN

RD3G400GNDatasheetNch 40V 40A Power MOSFETlOutlinelVDSS40V DPAKRDS(on)(Max.)7.5m TO-252ID40APD26W lInner circuitllFeaturesl1) Low on - resistance2) High power package (TO-252)3) Pb-free lead plating ; RoHS compliant4) Halogen freelPackaging specificationslEmbossed PackingTape Reel size (m

 ..2. Size:265K  inchange semiconductor
rd3g400gn.pdf

RD3G400GN
RD3G400GN

isc N-Channel MOSFET Transistor RD3G400GNFEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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History: RSH070N05 | RFP14N05 | RJJ1011DPD

 

 
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