RD3G500GN MOSFET Datasheet: N-Ch, 40V, 50A. Full specification with pinout and replacement list

RD3G500GN Specs and Replacement

Type Designator: RD3G500GN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm

Package: TO-252

RD3G500GN substitution

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RD3G500GN datasheet

..1. Size:1528K rohm
rd3g500gn.pdf pdf_icon

RD3G500GN Datasheet Nch 40V 50A Power MOSFET lOutline l VDSS 40V DPAK RDS(on)(Max.) 4.9m TO-252 ID 50A PD 35W lInner circuit l lFeatures l 1) Low on - resistance 2) High power package (TO-252) 3) Pb-free lead plating ; RoHS compliant 4) Halogen free lPackaging specifications l Embossed Packing Tape Reel size (m... See More ⇒

..2. Size:265K inchange semiconductor
rd3g500gn.pdf pdf_icon

isc N-Channel MOSFET Transistor RD3G500GN FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 4.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

Detailed specifications: R6035KNZ, R6035KNZ1, R6047MNZ1, R6547ENZ1, R6547KNZ1, R6576ENZ1, R6576KNZ1, RD3G400GN, 2N60, RD3G600GN, RD3H045SP, RD3H080SP, RD3H160SP, RD3H200SN, RD3L050SN, RD3L080SN, RD3L08CGN