All MOSFET. RD3G500GN Datasheet

 

RD3G500GN MOSFET. Datasheet pdf. Equivalent


   Type Designator: RD3G500GN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: TO-252

 RD3G500GN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RD3G500GN Datasheet (PDF)

 ..1. Size:1528K  rohm
 rd3g500gn.pdf

RD3G500GN RD3G500GN

RD3G500GNDatasheetNch 40V 50A Power MOSFETlOutlinelVDSS40V DPAKRDS(on)(Max.)4.9m TO-252ID50APD35W lInner circuitllFeaturesl1) Low on - resistance2) High power package (TO-252)3) Pb-free lead plating ; RoHS compliant4) Halogen freelPackaging specificationslEmbossed PackingTape Reel size (m

 ..2. Size:265K  inchange semiconductor
 rd3g500gn.pdf

RD3G500GN RD3G500GN

isc N-Channel MOSFET Transistor RD3G500GNFEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 4.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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