RD3G600GN MOSFET Datasheet: N-Ch, 40V, 60A. Full specification with pinout and replacement list

RD3G600GN Specs and Replacement

   Type Designator: RD3G600GN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO-252

RD3G600GN substitution

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RD3G600GN datasheet

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RD3G600GN Datasheet Nch 40V 60A Power MOSFET lOutline l VDSS 40V DPAK RDS(on)(Max.) 3.6m TO-252 ID 60A PD 40W lInner circuit l lFeatures l 1) Low on - resistance 2) High power package (TO-252) 3) Pb-free plating ; RoHS compliant 4) Halogen free lPackaging specifications l Embossed Packing Tape Reel size (mm) 33... See More ⇒

..2. Size:265K inchange semiconductor
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isc N-Channel MOSFET Transistor RD3G600GN FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

Detailed specifications: R6035KNZ1 , R6047MNZ1 , R6547ENZ1 , R6547KNZ1 , R6576ENZ1 , R6576KNZ1 , RD3G400GN , RD3G500GN , 8N60 , RD3H045SP , RD3H080SP , RD3H160SP , RD3H200SN , RD3L050SN , RD3L080SN , RD3L08CGN , RD3L140SP .