All MOSFET. RD3G600GN Datasheet

 

RD3G600GN MOSFET. Datasheet pdf. Equivalent


   Type Designator: RD3G600GN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46.5 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO-252

 RD3G600GN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RD3G600GN Datasheet (PDF)

 ..1. Size:2698K  rohm
 rd3g600gn.pdf

RD3G600GN RD3G600GN

RD3G600GNDatasheetNch 40V 60A Power MOSFETlOutlinelVDSS40V DPAKRDS(on)(Max.)3.6m TO-252ID60APD40W lInner circuitllFeaturesl1) Low on - resistance2) High power package (TO-252)3) Pb-free plating ; RoHS compliant4) Halogen freelPackaging specificationslEmbossed PackingTape Reel size (mm) 33

 ..2. Size:265K  inchange semiconductor
 rd3g600gn.pdf

RD3G600GN RD3G600GN

isc N-Channel MOSFET Transistor RD3G600GNFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: RTL035N03FRA | APT1001R1AN

 

 
Back to Top