RD3H160SP Datasheet and Replacement
Type Designator: RD3H160SP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO-252
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RD3H160SP Datasheet (PDF)
rd3h160sp.pdf

RD3H160SP DatasheetPch -45V -16A Power MOSFETlOutlinelVDSS-45V DPAKRDS(on)(Max.)50m TO-252ID16APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbo
rd3h160sp.pdf

isc P-Channel MOSFET Transistor RD3H160SPFEATURESDrain Current I = -16A@ T =25D CDrain Source Voltage-: V = -45V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: RCX100N25 | R6030KNX | RCJ050N25 | TK11A45D | R6515KNX | TK10P50W
Keywords - RD3H160SP MOSFET datasheet
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History: RCX100N25 | R6030KNX | RCJ050N25 | TK11A45D | R6515KNX | TK10P50W



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