All MOSFET. RD3P050SN Datasheet

 

RD3P050SN Datasheet and Replacement


   Type Designator: RD3P050SN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-252
 

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RD3P050SN Datasheet (PDF)

 ..1. Size:1597K  rohm
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RD3P050SN

RD3P050SNDatasheetNch 100V 5A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)190m TO-252ID5.0APD15W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmb

 ..2. Size:265K  inchange semiconductor
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RD3P050SN

isc N-Channel MOSFET Transistor RD3P050SNFEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 190m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: RD3H160SP , RD3H200SN , RD3L050SN , RD3L080SN , RD3L08CGN , RD3L140SP , RD3L150SN , RD3L220SN , EMB04N03H , RD3P100SN , RD3P130SP , RD3P175SN , RD3P200SN , RD3S075CN , RD3S100CN , RD3T050CN , RD3T075CN .

History: SIR880DP | RU40231R | SSP7N60B | 2SK1518 | FTS2057 | PHP3055L | STS19N3LLH6

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