RD3S100CN Specs and Replacement
Type Designator: RD3S100CN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 190 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.182 Ohm
Package: TO-252
RD3S100CN substitution
- MOSFET ⓘ Cross-Reference Search
RD3S100CN datasheet
rd3s100cn.pdf
RD3S100CN Datasheet Nch 190V 10A Power MOSFET lOutline l TO-252 VDSS 190V RDS(on)(Max.) 182m ID 10A PD 85W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lApplication l lPackaging specif... See More ⇒
rd3s100cn.pdf
isc N-Channel MOSFET Transistor RD3S100CN FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 190V(Min) DSS Static Drain-Source On-Resistance R = 182m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
Detailed specifications: RD3L150SN, RD3L220SN, RD3P050SN, RD3P100SN, RD3P130SP, RD3P175SN, RD3P200SN, RD3S075CN, RU7088R, RD3T050CN, RD3T075CN, RD3T100CN, RD3U040CN, RD3U060CN, RD3U080CN, FHP12N60, FL6L52010L
Keywords - RD3S100CN MOSFET specs
RD3S100CN cross reference
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RD3S100CN substitution
RD3S100CN replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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