All MOSFET. RD3S100CN Datasheet

 

RD3S100CN Datasheet and Replacement


   Type Designator: RD3S100CN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 190 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.182 Ohm
   Package: TO-252
 

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RD3S100CN Datasheet (PDF)

 ..1. Size:1584K  rohm
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RD3S100CN

RD3S100CNDatasheetNch 190V 10A Power MOSFETlOutlinel TO-252VDSS190VRDS(on)(Max.) 182mID 10APD85W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free plating ; RoHS compliantlApplicationllPackaging specif

 ..2. Size:265K  inchange semiconductor
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RD3S100CN

isc N-Channel MOSFET Transistor RD3S100CNFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 190V(Min)DSSStatic Drain-Source On-Resistance: R = 182m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

Datasheet: RD3L150SN , RD3L220SN , RD3P050SN , RD3P100SN , RD3P130SP , RD3P175SN , RD3P200SN , RD3S075CN , MMD60R360PRH , RD3T050CN , RD3T075CN , RD3T100CN , RD3U040CN , RD3U060CN , RD3U080CN , FHP12N60 , FL6L52010L .

History: IRLU9343-701PBF | SFP043N100C3

Keywords - RD3S100CN MOSFET datasheet

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