All MOSFET. RD3T100CN Datasheet

 

RD3T100CN Datasheet and Replacement


   Type Designator: RD3T100CN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.25 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.182 Ohm
   Package: TO-252
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RD3T100CN Datasheet (PDF)

 ..1. Size:1494K  rohm
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RD3T100CN

RD3T100CNDatasheetNch 200V 10A Power MOSFETlOutlinelVDSS 200V DPAKRDS(on)(Max.) 182m TO-252ID 10APD 85W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed Pac

 ..2. Size:265K  inchange semiconductor
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RD3T100CN

isc N-Channel MOSFET Transistor RD3T100CNFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 182m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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