RD3T100CNDatasheetNch 200V 10A Power MOSFETlOutlinelVDSS 200V DPAKRDS(on)(Max.) 182m TO-252ID 10APD 85W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed Pac

isc N-Channel MOSFET Transistor RD3T100CNFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 182m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur