AP3407S Datasheet and Replacement
Type Designator: AP3407S
Marking Code: A7H
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT23
AP3407S substitution
AP3407S Datasheet (PDF)
ap3407s.pdf

AP3407S / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.1 A RDS(ON)
ap3403gh ap3403gj.pdf

AP3403GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow Gate Charge BVDSS -30V DSimple Drive Requirement RDS(ON) 200m Fast Switching ID - 10A GSDescriptionGDSAdvanced Power MOSFETs utilized advanced processing techniques to TO-252(H)achieve the lowest poss
ap3402geh ap3402gej.pdf

AP3402GEH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 35VD Single Drive Requirement RDS(ON) 18m Surface Mount Package ID 38AG RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device de
Datasheet: AP3020 , AP30H100KA , AP30H150KA , AP30P30Q , AP3400 , AP3400S , AP3401 , AP3407 , IRFP260 , AP4435 , AP4438 , AP4606CS , AP4616 , AP4953 , AP55N03 , AP8205 , AP8205A .
History: RRH040P03 | STP21N65M5 | IRFP9242 | WMJ30N65EM | NCEP40P30K | NP89N04MUK
Keywords - AP3407S MOSFET datasheet
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History: RRH040P03 | STP21N65M5 | IRFP9242 | WMJ30N65EM | NCEP40P30K | NP89N04MUK



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