All MOSFET. AP3407S Datasheet

 

AP3407S Datasheet and Replacement


   Type Designator: AP3407S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23
 

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AP3407S Datasheet (PDF)

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AP3407S

AP3407S / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.1 A RDS(ON)

 8.1. Size:2028K  allpower
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AP3407S

 8.2. Size:1507K  cn apm
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AP3407S

AP3407AI -30V P-Channel Enhancement Mode MOSFET Description The AP3407AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.2A DS DR

 8.3. Size:1316K  cn apm
ap3407mi.pdf pdf_icon

AP3407S

AP3407MI -30V P-Channel Enhancement Mode MOSFET Description The AP3407MI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.8A DS DR

Datasheet: AP3020 , AP30H100KA , AP30H150KA , AP30P30Q , AP3400 , AP3400S , AP3401 , AP3407 , 2SK3878 , AP4435 , AP4438 , AP4606CS , AP4616 , AP4953 , AP55N03 , AP8205 , AP8205A .

History: BSH121 | DJR0417 | AP4616 | ATM8N80TF | LSE65R570GT

Keywords - AP3407S MOSFET datasheet

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