AP55N03 Specs and Replacement
Type Designator: AP55N03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO252
AP55N03 substitution
- MOSFET ⓘ Cross-Reference Search
AP55N03 datasheet
ap55n10f.pdf
AP55N10F N-Channel Enhancement Mode MOSFET General Description The AP55N10F uses advanced trench technology to provide excellent R ,device is suitable for use as a DS(ON) Battery protection or in other Switching application. General Features V = 100V I = 55A DS D R ... See More ⇒
Detailed specifications: AP3401, AP3407, AP3407S, AP4435, AP4438, AP4606CS, AP4616, AP4953, AO3401, AP8205, AP8205A, AP83T03K, AP8810, AP9926, BR4407, ATM2301PSA, ATM2302BNSA
Keywords - AP55N03 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: BSC152N10NSFG
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