All MOSFET. AP55N03 Datasheet

 

AP55N03 Datasheet and Replacement


   Type Designator: AP55N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252
 

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AP55N03 Datasheet (PDF)

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AP55N03

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AP55N03

AP55N10F N-Channel Enhancement Mode MOSFET General Description The AP55N10F uses advanced trench technology to provide excellent R ,device is suitable for use as a DS(ON)Battery protection or in other Switching application. General Features V = 100V I = 55A DS DR

Datasheet: AP3401 , AP3407 , AP3407S , AP4435 , AP4438 , AP4606CS , AP4616 , AP4953 , AO3401 , AP8205 , AP8205A , AP83T03K , AP8810 , AP9926 , BR4407 , ATM2301PSA , ATM2302BNSA .

History: NTMFD4901NF | FDS6930A

Keywords - AP55N03 MOSFET datasheet

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