AP8810 Specs and Replacement
Type Designator: AP8810
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 295 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TSSOP8
AP8810 substitution
- MOSFET ⓘ Cross-Reference Search
AP8810 datasheet
ap8814a.pdf
AP8814A 20V N+N hannel Enhancement Mode MOSFET Description D1 D2 The AP8814A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) G1 G2 operation with gate voltages as low as 2.5V. This S1 S2 device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I = 8A DS D R ... See More ⇒
Detailed specifications: AP4438, AP4606CS, AP4616, AP4953, AP55N03, AP8205, AP8205A, AP83T03K, SPP20N60C3, AP9926, BR4407, ATM2301PSA, ATM2302BNSA, ATM2306NSA, ATM2312NSA, ATM2601PSG, ATM2N65TE
Keywords - AP8810 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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