All MOSFET. AP8810 Datasheet

 

AP8810 Datasheet and Replacement


   Type Designator: AP8810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 295 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TSSOP8
 

 AP8810 substitution

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AP8810 Datasheet (PDF)

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AP8810

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AP8810

AP8814A 20V N+N hannel Enhancement Mode MOSFET Description D1D2The AP8814A uses advanced trench technology to provide excellent R , low gate charge and DS(ON)G1 G2operation with gate voltages as low as 2.5V. This S1 S2device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I = 8A DS DR

Datasheet: AP4438 , AP4606CS , AP4616 , AP4953 , AP55N03 , AP8205 , AP8205A , AP83T03K , SPP20N60C3 , AP9926 , BR4407 , ATM2301PSA , ATM2302BNSA , ATM2306NSA , ATM2312NSA , ATM2601PSG , ATM2N65TE .

History: AP6N3R5LI | TSF60R190S2 | TSF65R190S2 | SL12P03S | BRCS150C016YN | BRCS150N12SZC | BRCS150P04SC

Keywords - AP8810 MOSFET datasheet

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