ATM2601PSG Datasheet and Replacement
Type Designator: ATM2601PSG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 2.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT23-6
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ATM2601PSG Datasheet (PDF)
atm2601psg.pdf

ATM2601PSG P-Channel Enhancement Mode Power MOSFET Drain-Source Voltage -20V Continuous Drain Current -2.8A FEATURES SOT23-6 VDS = -20V,ID = -2.8A R
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SFS06R03BF | 2SK3530 | TX216521M6R | SIHFP460A | JCS12N65SEI | RUH3025M3 | 2SK1880S
Keywords - ATM2601PSG MOSFET datasheet
ATM2601PSG cross reference
ATM2601PSG equivalent finder
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History: SFS06R03BF | 2SK3530 | TX216521M6R | SIHFP460A | JCS12N65SEI | RUH3025M3 | 2SK1880S



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