All MOSFET. ATM2N65TE Datasheet

 

ATM2N65TE Datasheet and Replacement


   Type Designator: ATM2N65TE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO252
 

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ATM2N65TE Datasheet (PDF)

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ATM2N65TE

ATM2N65TE N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 650V Continuous Drain Current: 2A DESCRIPTION The ATM2N65TE is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw

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ATM2N65TE

ATM2N65TF N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 650V Continuous Drain Current: 2A DESCRIPTION The ATM2N65TF is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw

Datasheet: AP8810 , AP9926 , BR4407 , ATM2301PSA , ATM2302BNSA , ATM2306NSA , ATM2312NSA , ATM2601PSG , AON7506 , ATM2N65TF , ATM3400ANSA , ATM3404NSA , ATM4N65TE , ATM7002KNSA , ATM7002NSA , ATM7430NDH , ATM8N80TF .

History: IRFU010 | HGW059N12S

Keywords - ATM2N65TE MOSFET datasheet

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