All MOSFET. ATM2N65TE Datasheet

 

ATM2N65TE MOSFET. Datasheet pdf. Equivalent


   Type Designator: ATM2N65TE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO252

 ATM2N65TE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ATM2N65TE Datasheet (PDF)

 ..1. Size:488K  agertech
 atm2n65te.pdf

ATM2N65TE ATM2N65TE

ATM2N65TE N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 650V Continuous Drain Current: 2A DESCRIPTION The ATM2N65TE is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw

 6.1. Size:410K  agertech
 atm2n65tf.pdf

ATM2N65TE ATM2N65TE

ATM2N65TF N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 650V Continuous Drain Current: 2A DESCRIPTION The ATM2N65TF is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP30T10GK | NP32N055I | 2SK2021-01 | SIHLI640G | AO4618 | FTK7N60P

 

 
Back to Top