ATM2N65TE Datasheet and Replacement
Type Designator: ATM2N65TE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO252
ATM2N65TE substitution
ATM2N65TE Datasheet (PDF)
atm2n65te.pdf

ATM2N65TE N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 650V Continuous Drain Current: 2A DESCRIPTION The ATM2N65TE is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw
atm2n65tf.pdf

ATM2N65TF N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 650V Continuous Drain Current: 2A DESCRIPTION The ATM2N65TF is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw
Datasheet: AP8810 , AP9926 , BR4407 , ATM2301PSA , ATM2302BNSA , ATM2306NSA , ATM2312NSA , ATM2601PSG , IRF1407 , ATM2N65TF , ATM3400ANSA , ATM3404NSA , ATM4N65TE , ATM7002KNSA , ATM7002NSA , ATM7430NDH , ATM8N80TF .
History: IXFC22N60P | FQD6N40C | 2SK2939 | ATM3400ANSA | ATM2306NSA | AP4820AGYT | 2SK3221
Keywords - ATM2N65TE MOSFET datasheet
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History: IXFC22N60P | FQD6N40C | 2SK2939 | ATM3400ANSA | ATM2306NSA | AP4820AGYT | 2SK3221



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